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1 Ergebnisse
1
Study of metamorphic InGaAs/GaAs quantum well laser materia..:
Zhu, Yan
;
Ni, Hai-qiao
;
Wang, Hai-li
...
Optoelectronics Letters. , 2011
Link:
http://ir.semi.ac.cn/handle/172111/23052
RT Journal T1
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
UL https://suche.suub.uni-bremen.de/peid=base-ftchinacadscsemi:oai:ir.semi.ac.cn:172111_23052&Exemplar=1&LAN=DE A1 Zhu, Yan A1 Ni, Hai-qiao A1 Wang, Hai-li A1 He, Ji-fang A1 Li, Mi-feng A1 Shang, Xiang-jun A1 Niu, Zhi-chuan A1 Zhu, Y.(ttcow@126.com) YR 2011 K1 Epitaxial Growth K1 Gallium Arsenide K1 Growth(Materials) K1 Molecular Beam Epitaxy K1 Semiconducting Gallium K1 Semiconducting Indium K1 Semiconductor Quantum Wells K1 半导体物理 K1 epitaxy K1 atomic layer deposition K1 quantum well devices K1 solid phase epitaxial growth K1 solid phase epitaxy K1 spe K1 gaas K1 arseniures de gallium K1 galliumarsenid K1 atomic layer epitaxial growth K1 ale K1 mle growth K1 molecular layer epitaxial growth K1 chemical beam epitaxial growth K1 cbe K1 gas source mbe K1 gsmbe K1 metalorganic molecular beam epitaxy K1 mombe K1 ommbe K1 chemical vapour deposition K1 apcvd K1 chemical vapor deposition K1 cvd K1 laser cvd K1 laser-induced cvd K1 lpcvd K1 chemical vapour infiltration K1 chemical vapor infiltration K1 cvi K1 crystal growth from vapour K1 laser deposition K1 mocvd K1 metalorganic chemical vapour deposition K1 movpe K1 omcvd K1 omvpe K1 molecular beam epitaxial growth K1 mbe K1 migration-enhanced epitaxy JF Optoelectronics Letters LK http://ir.semi.ac.cn/handle/172111/23052 DO http://ir.semi.ac.cn/handle/172111/23052 SF ELIB - SuUB Bremen
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