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Thermal characteristic of GaAs-based laser diodes:

Qiao, Yanbin ; Feng, Shiwei ; Ma, Xiaoyu...
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering. , 2011

Link: http://ir.semi.ac.cn/handle/172111/23100

RT Journal
T1 <Title>Thermal characteristic of GaAs-based laser diodes</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftchinacadscsemi:oai:ir.semi.ac.cn:172111_23100&Exemplar=1&LAN=DE
				
A1 Qiao, Yanbin
A1 Feng, Shiwei
A1 Ma, Xiaoyu
A1 Wang, Xiaowei
A1 Guo, Chunsheng
A1 Deng, Haitao
A1 Zhang, Guangchen
A1 Qiao, Y.(ybqiao@emails.bjut.edu.cn)
YR 2011
K1 Degradation
K1 Diodes
K1 Electric Properties
K1 Gallium Arsenide
K1 Hybrid Materials
K1 Optical Properties
K1 Semiconducting Gallium
K1 Semiconductor Diodes
K1 Testing
K1 Thermodynamic Properties
K1 半导体器件
K1 degradation (chemical)
K1 deterioration
K1 electrical properties
K1 semiconductor
K1 examinations
K1 chemical potential
K1 化学降解
K1 chemical degradation
K1 chemical breakdown
K1 corrosion
K1 chemical
K1 deterioration (francais)
K1 zersetzung
K1 decay
K1 劣化
K1 decomposition
K1 分解
K1 降解
K1 decomposing
K1 dioden
K1 diodes (francais)
K1 p-i-n diodes
K1 elektrische eigenschaften
K1 proprietes electriques
K1 electrical props
K1 bardeen approximation
K1 electrical conductivity
K1 superconductivity
K1 negative resistance
K1 negative resistance effects
K1 gaas
JF Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering
LK http://ir.semi.ac.cn/handle/172111/23100
DO http://ir.semi.ac.cn/handle/172111/23100
SF ELIB - SuUB Bremen

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