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1 Ergebnisse
1
Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p..:
Liu, Yan
;
Yan, Jing
;
Liu, Mingshan
...
SEMICONDUCTOR SCIENCE AND TECHNOLOGY. , 2014
Link:
http://ir.semi.ac.cn/handle/172111/26012
RT Journal T1
Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate
UL https://suche.suub.uni-bremen.de/peid=base-ftchinacadscsemi:oai:ir.semi.ac.cn:172111_26012&Exemplar=1&LAN=DE A1 Liu, Yan A1 Yan, Jing A1 Liu, Mingshan A1 Wang, Hongjuan A1 Zhang, Qingfang A1 Zhao, Bin A1 Zhang, Chunfu A1 Cheng, Buwen A1 Hao, Yue A1 Han, Genquan YR 2014 K1 光电子学 JF SEMICONDUCTOR SCIENCE AND TECHNOLOGY LK http://ir.semi.ac.cn/handle/172111/26012 DO http://ir.semi.ac.cn/handle/172111/26012 SF ELIB - SuUB Bremen
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