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1 Ergebnisse
1
Electron mobility related to scattering caused by the strai..:
Zhao J (Zhao, Jianzhi)
;
Lin Z (Lin, Zhaojun)
;
Corrigan TD (Corrigan, Timothy D.)
...
APPLIED PHYSICS LETTERS. , 2007
Link:
http://ir.semi.ac.cn/handle/172111/9214
RT Journal T1
Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures
UL https://suche.suub.uni-bremen.de/peid=base-ftchinacadscsemi:oai:ir.semi.ac.cn:172111_9214&Exemplar=1&LAN=DE A1 Zhao J (Zhao, Jianzhi) A1 Lin Z (Lin, Zhaojun) A1 Corrigan TD (Corrigan, Timothy D.) A1 Wang Z (Wang, Zhen) A1 You Z (You, Zhidong) A1 Wang Z (Wang, Zhanguo) A1 Zhao, J, Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China. 电子邮箱地址: linzj@sdu.edu.cn YR 2007 K1 Field-effect Transistors K1 半导体材料 K1 unipolar transistors K1 metal oxide semiconductors K1 field effect transistor circuits K1 field effect transistors K1 fet K1 hemt circuits K1 modfet circuits K1 jfet circuits K1 junction gate field effect transistors K1 jfet K1 mesfet circuits K1 mosfet circuits K1 power field effect transistors K1 power fet K1 static induction transistors K1 sit K1 cascode mosfet K1 fet (transistors) K1 igfet K1 mesfets K1 misfets K1 mosfet K1 junction field effect transistors JF APPLIED PHYSICS LETTERS LK http://ir.semi.ac.cn/handle/172111/9214 DO http://ir.semi.ac.cn/handle/172111/9214 SF ELIB - SuUB Bremen
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