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1 Ergebnisse
1
Electrical and optical properties of InAs/GaAs quantum dots..:
Hu LJ (Hu Liang-Jun)
;
Chen YH (Chen Yong-Hai)
;
Ye XL (Ye Xiao-Ling)
..
ACTA PHYSICA SINICA. , 2007
Link:
http://ir.semi.ac.cn/handle/172111/9344
RT Journal T1
Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation
UL https://suche.suub.uni-bremen.de/peid=base-ftchinacadscsemi:oai:ir.semi.ac.cn:172111_9344&Exemplar=1&LAN=DE A1 Hu LJ (Hu Liang-Jun) A1 Chen YH (Chen Yong-Hai) A1 Ye XL (Ye Xiao-Ling) A1 Wang ZG (Wang Zhan-Guo) A1 Hu, LJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: liangjun_hu@yahoo.com.cn YR 2007 K1 Ion implantatIon K1 半导体材料 K1 离子注入 K1 implantation K1 ion K1 plasma immersion ion implantation K1 piii K1 plasma materials processing K1 plasma welding K1 implantation d ions K1 ionenimpfung JF ACTA PHYSICA SINICA LK http://ir.semi.ac.cn/handle/172111/9344 DO http://ir.semi.ac.cn/handle/172111/9344 SF ELIB - SuUB Bremen
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