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1 Ergebnisse
1
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structur..:
Wang XL (Wang Xiaoliang)
;
Wang CM (Wang Cuimei)
;
Hu GX (Hu Guoxin)
...
JOURNAL OF CRYSTAL GROWTH. , 2007
Link:
http://ir.semi.ac.cn/handle/172111/9606
RT Journal T1
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate
UL https://suche.suub.uni-bremen.de/peid=base-ftchinacadscsemi:oai:ir.semi.ac.cn:172111_9606&Exemplar=1&LAN=DE A1 Wang XL (Wang Xiaoliang) A1 Wang CM (Wang Cuimei) A1 Hu GX (Hu Guoxin) A1 Mao HL (Mao Hongling) A1 Fang CB (Fang Cebao) A1 Wang JX (Wang Junxi) A1 Ran JX (Ran Junxue) A1 Li HP (Li Hanping) A1 Li JM (Li Jinmin) A1 Wang ZG (Wang, Zhanguo) A1 Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China YR 2007 K1 2deg K1 半导体材料 K1 electron gas K1 电子气 K1 fermi gas K1 hole gas K1 luttinger liquid K1 rpa calculations K1 random phase approximation K1 tamm-dancoff approximation K1 two-dimensional electron gas K1 2d electron gas K1 two-dimensional hole gas K1 2d hole gas K1 rpa K1 tda JF JOURNAL OF CRYSTAL GROWTH LK http://ir.semi.ac.cn/handle/172111/9606 DO http://ir.semi.ac.cn/handle/172111/9606 SF ELIB - SuUB Bremen
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