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1 Ergebnisse
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Device engineering of p-CuAlO2/β-Ga2O3 interface: A stagger..:
Chowdam Venkata Prasad
;
Madani Labed
;
Mohammad Tauquir Alam Shamim Shaikh
...
http://www.sciencedirect.com/science/article/pii/S2590049823000620. , 2023
Link:
https://doi.org/10.1016/j.mtadv.2023.100402
RT Journal T1
Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment
UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:2b6a7176e8ed4376a4a1fc90c6e0efe7&Exemplar=1&LAN=DE A1 Chowdam Venkata Prasad A1 Madani Labed A1 Mohammad Tauquir Alam Shamim Shaikh A1 Ji Young Min A1 Tan Hoang Vu Nguyen A1 Wonjin Song A1 Jang Hyeok Park A1 Kyong Jae Kim A1 Sangmo Kim A1 Sinsu Kyoung A1 Nouredine Sengouga A1 You Seung Rim PB Elsevier YR 2023 K1 p-CuAlO2 K1 β-Ga2O3 K1 Heterojunction K1 On-resistance K1 Breakdown voltage K1 Materials of engineering and construction. Mechanics of materials K1 TA401-492 JF http://www.sciencedirect.com/science/article/pii/S2590049823000620 LK http://dx.doi.org/https://doi.org/10.1016/j.mtadv.2023.100402 DO https://doi.org/10.1016/j.mtadv.2023.100402 SF ELIB - SuUB Bremen
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