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1 Ergebnisse
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Fabrication of a Hole‐Type Vertical Resistive‐Switching Ran..:
Seung Soo Kim
;
Soo Kyeom Yong
;
Jihun Kim
...
https://doi.org/10.1002/aelm.202200998. , 2023
Link:
https://doi.org/10.1002/aelm.202200998
RT Journal T1
Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading
UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:3616e16c945b4aeab0153e149bd2b5e4&Exemplar=1&LAN=DE A1 Seung Soo Kim A1 Soo Kyeom Yong A1 Jihun Kim A1 Jin Myung Choi A1 Tae Won Park A1 Hyun Young Kim A1 Hae Jin Kim A1 Cheol Seong Hwang PB Wiley-VCH YR 2023 K1 Al‐doped HfO 2 K1 intercell interference K1 lateral charge spreading K1 self‐rectifying memory K1 vertical resistive switching memory K1 Electric apparatus and materials. Electric circuits. Electric networks K1 TK452-454.4 K1 Physics K1 QC1-999 JF https://doi.org/10.1002/aelm.202200998 LK http://dx.doi.org/https://doi.org/10.1002/aelm.202200998 DO https://doi.org/10.1002/aelm.202200998 SF ELIB - SuUB Bremen
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