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1 Ergebnisse
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Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures..:
Xiaoqing Xu
;
Jiebin Zhong
;
Hongyun So
...
http://dx.doi.org/10.1063/1.4967816. , 2016
Link:
https://doi.org/10.1063/1.4967816
RT Journal T1
Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility
UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:38bd5c077a1b4e8498ea5d34444d09cb&Exemplar=1&LAN=DE A1 Xiaoqing Xu A1 Jiebin Zhong A1 Hongyun So A1 Aras Norvilas A1 Christof Sommerhalter A1 Debbie G. Senesky A1 Mary Tang PB AIP Publishing LLC YR 2016 K1 Physics K1 QC1-999 JF http://dx.doi.org/10.1063/1.4967816 LK http://dx.doi.org/https://doi.org/10.1063/1.4967816 DO https://doi.org/10.1063/1.4967816 SF ELIB - SuUB Bremen
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