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1 Ergebnisse
1
Ultra-Low Specific On-resistance Lateral Double-Diffused Me..:
Zhuo Wang
;
Zhangyi'an Yuan
;
Xin Zhou
...
http://link.springer.com/article/10.1186/s11671-019-2866-5. , 2019
Link:
https://doi.org/10.1186/s11671-019-2866-5
RT Journal T1
Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer
UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:3fc4c600659b4c3e81af0b6d06c49335&Exemplar=1&LAN=DE A1 Zhuo Wang A1 Zhangyi'an Yuan A1 Xin Zhou A1 Ming Qiao A1 Zhaoji Li A1 Bo Zhang PB SpringerOpen YR 2019 K1 Enhanced dual-gate K1 Lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) K1 Partial buried layer K1 Specific on-resistance K1 Materials of engineering and construction. Mechanics of materials K1 TA401-492 JF http://link.springer.com/article/10.1186/s11671-019-2866-5 LK http://dx.doi.org/https://doi.org/10.1186/s11671-019-2866-5 DO https://doi.org/10.1186/s11671-019-2866-5 SF ELIB - SuUB Bremen
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