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1 Ergebnisse
1
Gallium nitride heterostructure field-effect transistor wit..:
V. S. Volcheck
;
V. R. Stempitsky
https://doklady.bsuir.by/jour/article/view/3161. , 2021
Link:
https://doi.org/10.35596/1729-7648-2021-19-6-74-82
RT Journal T1 <Title>Gallium nitride heterostructure field-effect transistor with a heat-removal system based on a trench in the passivation layer filled by a high thermal conductivity material</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:4002ff597aca4505943cf51312911f19&Exemplar=1&LAN=DE A1 V. S. Volcheck A1 V. R. Stempitsky PB Educational institution «Belarusian State University of Informatics and Radioelectronics» YR 2021 K1 heterostructure field-effect transistor K1 grapheme K1 gallium nitride K1 self-heating simulation K1 power electronics K1 passivation layer K1 heat-removal system K1 thermal conductivity K1 temperature K1 Electronics K1 TK7800-8360 JF https://doklady.bsuir.by/jour/article/view/3161 LK http://dx.doi.org/https://doi.org/10.35596/1729-7648-2021-19-6-74-82 DO https://doi.org/10.35596/1729-7648-2021-19-6-74-82 SF ELIB - SuUB Bremen
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