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1 Ergebnisse
1
Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor ..:
Ying Wang
;
Cheng-Hao Yu
;
Hong-Kai Mao
...
https://ieeexplore.ieee.org/document/9187894/. , 2020
Link:
https://doi.org/10.1109/JEDS.2020.3022571
RT Journal T1 <Title>Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:430792c9d5a04dc0bbf1b253e659f083&Exemplar=1&LAN=DE A1 Ying Wang A1 Cheng-Hao Yu A1 Hong-Kai Mao A1 Xue Wu A1 Fang-Wen Su A1 Xing-Ji Li A1 Jian-Qun Yang PB IEEE YR 2020 K1 4H-SiC K1 heterojunction K1 insulated gate bipolar transistor (IGBT) K1 turn-off loss K1 turn-off time K1 breakdown voltage K1 Electrical engineering. Electronics. Nuclear engineering K1 TK1-9971 JF https://ieeexplore.ieee.org/document/9187894/ LK http://dx.doi.org/https://doi.org/10.1109/JEDS.2020.3022571 DO https://doi.org/10.1109/JEDS.2020.3022571 SF ELIB - SuUB Bremen
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