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1 Ergebnisse
1
Connection between Carbon Incorporation and Growth Rate for..:
Timothy Ciarkowski
;
Noah Allen
;
Eric Carlson
...
https://www.mdpi.com/1996-1944/12/15/2455. , 2019
Link:
https://doi.org/10.3390/ma12152455
RT Journal T1
Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE
UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:46b582668abe44f88b24225fcecd9f0d&Exemplar=1&LAN=DE A1 Timothy Ciarkowski A1 Noah Allen A1 Eric Carlson A1 Robert McCarthy A1 Chris Youtsey A1 Jingshan Wang A1 Patrick Fay A1 Jinqiao Xie A1 Louis Guido PB MDPI AG YR 2019 K1 III-nitride semiconductors K1 GaN-on-GaN homoepitaxy K1 organometallic vapor phase epitaxy K1 metal–organic chemical vapor deposition K1 carbon incorporation K1 electronic compensation K1 materials characterization K1 secondary ion mass spectroscopy K1 Technology K1 T K1 Electrical engineering. Electronics. Nuclear engineering K1 TK1-9971 K1 Engineering (General). Civil engineering (General) K1 TA1-2040 K1 Microscopy K1 QH201-278.5 K1 Descriptive and experimental mechanics K1 QC120-168.85 JF https://www.mdpi.com/1996-1944/12/15/2455 LK http://dx.doi.org/https://doi.org/10.3390/ma12152455 DO https://doi.org/10.3390/ma12152455 SF ELIB - SuUB Bremen
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