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1 Ergebnisse
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Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/G..:
Peter D. Nguyen
;
Michael Brian Clavel
;
Patrick S. Goley
...
https://ieeexplore.ieee.org/document/7093118/. , 2015
Link:
https://doi.org/10.1109/JEDS.2015.2425959
RT Journal T1
Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer
UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:4a636b1e54e24070b98f99e72168d06f&Exemplar=1&LAN=DE A1 Peter D. Nguyen A1 Michael Brian Clavel A1 Patrick S. Goley A1 Jheng-Sin Liu A1 Noah P. Allen A1 Louis J. Guido A1 Mantu K. Hudait PB IEEE YR 2015 K1 Germanium K1 heteroepitaxy K1 metal oxide semiconductor (MOS) devices K1 silicon K1 III-V materials K1 Electrical engineering. Electronics. Nuclear engineering K1 TK1-9971 JF https://ieeexplore.ieee.org/document/7093118/ LK http://dx.doi.org/https://doi.org/10.1109/JEDS.2015.2425959 DO https://doi.org/10.1109/JEDS.2015.2425959 SF ELIB - SuUB Bremen
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