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Physic-topological (electrical) model of a junction field e..:
Lovshenko Ivan
;
Khanko Veranika
;
Stempitsky Viktor
https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_10002.pdf. , 2019
Link:
https://doi.org/10.1051/itmconf/20193010002
RT Journal T1 <Title>Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:4bcfc6f773024f64a4bd1448dd1be33e&Exemplar=1&LAN=DE A1 Lovshenko Ivan A1 Khanko Veranika A1 Stempitsky Viktor PB EDP Sciences YR 2019 K1 Information technology K1 T58.5-58.64 JF https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_10002.pdf LK http://dx.doi.org/https://doi.org/10.1051/itmconf/20193010002 DO https://doi.org/10.1051/itmconf/20193010002 SF ELIB - SuUB Bremen
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