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1 Ergebnisse
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3D Numerical Simulation of a Z Gate Layout MOSFET for Radia..:
Ying Wang
;
Chan Shan
;
Wei Piao
...
https://www.mdpi.com/2072-666X/9/12/659. , 2018
Link:
https://doi.org/10.3390/mi9120659
RT Journal T1 <Title>3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:51505b60ac1c4bb9b21f5d01552c583e&Exemplar=1&LAN=DE A1 Ying Wang A1 Chan Shan A1 Wei Piao A1 Xing-ji Li A1 Jian-qun Yang A1 Fei Cao A1 Cheng-hao Yu PB MDPI AG YR 2018 K1 bulk NMOS devices K1 radiation hardened by design (RHBD) K1 total ionizing dose (TID) K1 Sentaurus TCAD K1 layout K1 Mechanical engineering and machinery K1 TJ1-1570 JF https://www.mdpi.com/2072-666X/9/12/659 LK http://dx.doi.org/https://doi.org/10.3390/mi9120659 DO https://doi.org/10.3390/mi9120659 SF ELIB - SuUB Bremen
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