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1 Ergebnisse
1
High quality boron-doped epitaxial layers grown at 200°C fr..:
Ronan Léal
;
Farah Haddad
;
Gilles Poulain
..
http://dx.doi.org/10.1063/1.4976685. , 2017
Link:
https://doi.org/10.1063/1.4976685
RT Journal T1
High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells
UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:66dd8cc072254392ab128ab928ff530c&Exemplar=1&LAN=DE A1 Ronan Léal A1 Farah Haddad A1 Gilles Poulain A1 Jean-Luc Maurice A1 Pere Roca i Cabarrocas PB AIP Publishing LLC YR 2017 K1 Physics K1 QC1-999 JF http://dx.doi.org/10.1063/1.4976685 LK http://dx.doi.org/https://doi.org/10.1063/1.4976685 DO https://doi.org/10.1063/1.4976685 SF ELIB - SuUB Bremen
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