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Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based ..:
Jae‐Hyeok Cho
;
Ji‐Young Go
;
Tan Tan Bui
...
https://doi.org/10.1002/aelm.202201014. , 2023
Link:
https://doi.org/10.1002/aelm.202201014
RT Journal T1
Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur Doping
UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:6e4269ce3bbf48f2866b97c974225b0f&Exemplar=1&LAN=DE A1 Jae‐Hyeok Cho A1 Ji‐Young Go A1 Tan Tan Bui A1 Seunguk Mun A1 Yunseok Kim A1 Kyunghan Ahn A1 Yong‐Young Noh A1 Myung‐Gil Kim PB Wiley-VCH YR 2023 K1 defect passivation K1 metal halide perovskites K1 p‐type doping K1 thin‐film transistor K1 xanthates K1 Electric apparatus and materials. Electric circuits. Electric networks K1 TK452-454.4 K1 Physics K1 QC1-999 JF https://doi.org/10.1002/aelm.202201014 LK http://dx.doi.org/https://doi.org/10.1002/aelm.202201014 DO https://doi.org/10.1002/aelm.202201014 SF ELIB - SuUB Bremen
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