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1 Ergebnisse
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Simulation Analysis in Sub-0.1 μm for Partial Isolation Fie..:
Young Kwon Kim
;
Jin Sung Lee
;
Geon Kim
...
http://www.mdpi.com/2079-9292/7/10/227. , 2018
Link:
https://doi.org/10.3390/electronics7100227
RT Journal T1
Simulation Analysis in Sub-0.1 μm for Partial Isolation Field-Effect Transistors
UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:78105cd8ad644d80afd41f104a4b11aa&Exemplar=1&LAN=DE A1 Young Kwon Kim A1 Jin Sung Lee A1 Geon Kim A1 Taesik Park A1 HuiJung Kim A1 Young Pyo Cho A1 Young June Park A1 Myoung Jin Lee PB MDPI AG YR 2018 K1 drain-induced barrier lowering (DIBL) K1 gate-induced drain leakage (GIDL) K1 silicon on insulator (SOI) K1 Electronics K1 TK7800-8360 JF http://www.mdpi.com/2079-9292/7/10/227 LK http://dx.doi.org/https://doi.org/10.3390/electronics7100227 DO https://doi.org/10.3390/electronics7100227 SF ELIB - SuUB Bremen
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