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1 Ergebnisse
1
Physics-Based Analytical Channel Charge Model of In x Ga 1-..:
Hyeon-Seok Jeong
;
Wan-Soo Park
;
Hyeon-Bhin Jo
...
https://ieeexplore.ieee.org/document/9770423/. , 2022
Link:
https://doi.org/10.1109/JEDS.2022.3171437
RT Journal T1
Physics-Based Analytical Channel Charge Model of In x Ga 1- x As/In 0.5 2Al 0.48 As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes
UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:dc6ba75799cc45bea3393de3a8a5a735&Exemplar=1&LAN=DE A1 Hyeon-Seok Jeong A1 Wan-Soo Park A1 Hyeon-Bhin Jo A1 In-Geun Lee A1 Tae-Woo Kim A1 Takuya Tsutsumi A1 Hiroki Sugiyama A1 Hideaki Matsuzaki A1 Sung-Ho Hahm A1 Jae-Hak Lee A1 Dae-Hyun Kim PB IEEE YR 2022 K1 In x Ga1- x As/In0.52Al0.48As QW FETs K1 two-dimensional electron-gate density ( n ₂- DEG ) K1 subthreshold regime K1 inversion regime K1 near-threshold regime K1 Electrical engineering. Electronics. Nuclear engineering K1 TK1-9971 JF https://ieeexplore.ieee.org/document/9770423/ LK http://dx.doi.org/https://doi.org/10.1109/JEDS.2022.3171437 DO https://doi.org/10.1109/JEDS.2022.3171437 SF ELIB - SuUB Bremen
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