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1 Ergebnisse
1
High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOS..:
Sang-Hyeon Kim
;
Ilpyo Roh
;
Jae-Hoon Han
...
https://ieeexplore.ieee.org/document/9264257/. , 2021
Link:
https://doi.org/10.1109/JEDS.2020.3039370
RT Journal T1
High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:e14f70b92ca14adebb389839bfcd79c5&Exemplar=1&LAN=DE A1 Sang-Hyeon Kim A1 Ilpyo Roh A1 Jae-Hoon Han A1 Dae-Myeong Geum A1 Seong Kwang Kim A1 Soo Seok Kang A1 Hang-Kyu Kang A1 Woo Chul Lee A1 Seong Keun Kim A1 Do Kyung Hwang A1 Yun Heub Song A1 Jin Dong Song PB IEEE YR 2021 K1 GaSb K1 III-V K1 ultra-thin-body (UTB) K1 InGaAs passivation K1 Electrical engineering. Electronics. Nuclear engineering K1 TK1-9971 JF https://ieeexplore.ieee.org/document/9264257/ LK http://dx.doi.org/https://doi.org/10.1109/JEDS.2020.3039370 DO https://doi.org/10.1109/JEDS.2020.3039370 SF ELIB - SuUB Bremen
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