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1 Ergebnisse
1
A New SiC Planar-Gate IGBT for Injection Enhancement Effect..:
Meng Zhang
;
Baikui Li
;
Zheyang Zheng
..
https://www.mdpi.com/1996-1073/14/1/82. , 2020
Link:
https://doi.org/10.3390/en14010082
RT Journal T1
A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field
UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:f59cab9b66e345bcaead65e7a7b4fe75&Exemplar=1&LAN=DE A1 Meng Zhang A1 Baikui Li A1 Zheyang Zheng A1 Xi Tang A1 Jin Wei PB MDPI AG YR 2020 K1 SiC planar-gate IGBT K1 injection enhancement effect K1 embedded trench p-MOSFET K1 carrier storage layer K1 E OFF - V ON trade-off K1 Technology K1 T JF https://www.mdpi.com/1996-1073/14/1/82 LK http://dx.doi.org/https://doi.org/10.3390/en14010082 DO https://doi.org/10.3390/en14010082 SF ELIB - SuUB Bremen
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