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1 Ergebnisse
1
Effect of ALD Processes on Physical and Electrical Properti..:
Honggyun Kim
;
Vijay D. Chavan
;
Jamal Aziz
...
https://ieeexplore.ieee.org/document/9797717/. , 2022
Link:
https://doi.org/10.1109/ACCESS.2022.3183593
RT Journal T1
Effect of ALD Processes on Physical and Electrical Properties of HfO 2 Dielectrics for the Surface Passivation of a CMOS Image Sensor Application
UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:fb50d026caf04423a1a60a323b801b09&Exemplar=1&LAN=DE A1 Honggyun Kim A1 Vijay D. Chavan A1 Jamal Aziz A1 Byoungsu Ko A1 Jae-Sung Lee A1 Junsuk Rho A1 Tukaram D. Dongale A1 Kyeong-Keun Choi A1 Deok-Kee Kim PB IEEE YR 2022 K1 Atomic layer deposition K1 carrier lifetime K1 CMOS image sensor K1 surface passivation K1 forming gas K1 HfO₂ K1 Electrical engineering. Electronics. Nuclear engineering K1 TK1-9971 JF https://ieeexplore.ieee.org/document/9797717/ LK http://dx.doi.org/https://doi.org/10.1109/ACCESS.2022.3183593 DO https://doi.org/10.1109/ACCESS.2022.3183593 SF ELIB - SuUB Bremen
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