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1 Ergebnisse
1
Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epita..:
Denis Petrovich Borisenko
;
Alexander Sergeevich Gusev
;
Nikolay Ivanovich Kargin
...
https://www.mdpi.com/2076-3417/12/22/11516. , 2022
Link:
https://doi.org/10.3390/app122211516
RT Journal T1
Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoret-ical Study
UL https://suche.suub.uni-bremen.de/peid=base-ftdoajarticles:oai:doaj.org_article:fbc691693ff24fc7ad2c748435517dd4&Exemplar=1&LAN=DE A1 Denis Petrovich Borisenko A1 Alexander Sergeevich Gusev A1 Nikolay Ivanovich Kargin A1 Petr Leonidovich Dobrokhotov A1 Alexey Afanasievich Timofeev A1 Vladimir Arkhipovich Labunov A1 Mikhail Mikhailovich Mikhalik A1 Konstantin Petrovich Katin A1 Mikhail Mikhailovich Maslov A1 Pavel Sergeevich Dzhumaev A1 Ivan Vladimirovich Komissarov PB MDPI AG YR 2022 K1 GaN/AlN K1 molecular beam epitaxy K1 CVD graphene K1 buffer layer K1 gallium nitride K1 GaN-on-Si technology K1 Technology K1 T K1 Engineering (General). Civil engineering (General) K1 TA1-2040 K1 Biology (General) K1 QH301-705.5 K1 Physics K1 QC1-999 K1 Chemistry K1 QD1-999 JF https://www.mdpi.com/2076-3417/12/22/11516 LK http://dx.doi.org/https://doi.org/10.3390/app122211516 DO https://doi.org/10.3390/app122211516 SF ELIB - SuUB Bremen
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