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1 Ergebnisse
1
Investigation of Electrically Active Defects in SiC Power D..:
Für, Natalija
;
Belanche Guadas, Manuel
;
id_orcid:0 000-0002-1101-9554
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2023.3242760. , 2023
Link:
https://hdl.handle.net/20.500.11850/629386
RT Journal T1
Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation
UL https://suche.suub.uni-bremen.de/peid=base-ftethz:oai:www.research-collection.ethz.ch:20.500.11850_629386&Exemplar=1&LAN=DE A1 Für, Natalija A1 Belanche Guadas, Manuel A1 id_orcid:0 000-0002-1101-9554 A1 Martinella, Corinna A1 Kumar, Piyush A1 Bathen, Marianne A1 id_orcid:0 000-0002-6269-3530 A1 Grossner, Ulrike A1 id_orcid:0 000-0002-2495-8550 PB IEEE YR 2023 K1 Deep-level transient spectroscopy (DLTS) K1 defects K1 degradation K1 heavy ion K1 junction barrier Schottky (JBS) K1 microbeam K1 minority carrier transient spectroscopy (MCTS) K1 silicon carbide (SiC) power diodes K1 single-event effect (SEE) K1 single-event leakage current (SELC) JF info:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2023.3242760 LK http://dx.doi.org/https://hdl.handle.net/20.500.11850/629386 DO https://hdl.handle.net/20.500.11850/629386 SF ELIB - SuUB Bremen
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