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1 Ergebnisse
1
Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O..:
Michitaka Yoshino
;
Yuto Ando
;
Manato Deki
...
Energy Materials. , 2019
Link:
https://doi.org/10.3390/ma12050689
RT Journal T1
Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics
UL https://suche.suub.uni-bremen.de/peid=base-ftmdpi:oai:mdpi.com:_1996-1944_12_5_689_&Exemplar=1&LAN=DE A1 Michitaka Yoshino A1 Yuto Ando A1 Manato Deki A1 Toru Toyabe A1 Kazuo Kuriyama A1 Yoshio Honda A1 Tomoaki Nishimura A1 Hiroshi Amano A1 Tetsu Kachi A1 Tohru Nakamura PB Multidisciplinary Digital Publishing Institute YR 2019 K1 GaN K1 ion implantation K1 Mg K1 MOSFET K1 Si JF Energy Materials LK http://dx.doi.org/https://doi.org/10.3390/ma12050689 DO https://doi.org/10.3390/ma12050689 SF ELIB - SuUB Bremen
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