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1 Ergebnisse
1
Improved Intrinsic Nonlinear Characteristics of Ta2O5/Al2O3..:
Ji-Ho Ryu
;
Sungjun Kim
Electronic Materials. , 2020
Link:
https://doi.org/10.3390/ma13184201
RT Journal T1
Improved Intrinsic Nonlinear Characteristics of Ta2O5/Al2O3-Based Resistive Random-Access Memory for High-Density Memory Applications
UL https://suche.suub.uni-bremen.de/peid=base-ftmdpi:oai:mdpi.com:_1996-1944_13_18_4201_&Exemplar=1&LAN=DE A1 Ji-Ho Ryu A1 Sungjun Kim PB Multidisciplinary Digital Publishing Institute YR 2020 K1 memristor K1 RRAM K1 nonlinearity K1 read margin K1 conduction mechanism K1 F–N tunneling K1 XPS JF Electronic Materials LK http://dx.doi.org/https://doi.org/10.3390/ma13184201 DO https://doi.org/10.3390/ma13184201 SF ELIB - SuUB Bremen
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