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1 Ergebnisse
1
Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunct..:
Teng Jiao
;
Wei Chen
;
Zhengda Li
...
Electronic Materials. , 2022
Link:
https://doi.org/10.3390/ma15238280
RT Journal T1
Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD
UL https://suche.suub.uni-bremen.de/peid=base-ftmdpi:oai:mdpi.com:_1996-1944_15_23_8280_&Exemplar=1&LAN=DE A1 Teng Jiao A1 Wei Chen A1 Zhengda Li A1 Zhaoti Diao A1 Xinming Dang A1 Peiran Chen A1 Xin Dong A1 Yuantao Zhang A1 Baolin Zhang PB Multidisciplinary Digital Publishing Institute YR 2022 K1 Ga 2 O 3 K1 Schottky barrier diodes K1 heterojunction K1 MOCVD JF Electronic Materials LK http://dx.doi.org/https://doi.org/10.3390/ma15238280 DO https://doi.org/10.3390/ma15238280 SF ELIB - SuUB Bremen
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