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1 Ergebnisse
1
Influence of Different Device Structures on the Degradation..:
Zhaoxiang Wei
;
Hao Fu
;
Xiaowen Yan
...
Materials Physics. , 2022
Link:
https://doi.org/10.3390/ma15020457
RT Journal T1
Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example
UL https://suche.suub.uni-bremen.de/peid=base-ftmdpi:oai:mdpi.com:_1996-1944_15_2_457_&Exemplar=1&LAN=DE A1 Zhaoxiang Wei A1 Hao Fu A1 Xiaowen Yan A1 Sheng Li A1 Long Zhang A1 Jiaxing Wei A1 Siyang Liu A1 Weifeng Sun A1 Weili Wu A1 Song Bai PB Multidisciplinary Digital Publishing Institute YR 2022 K1 SiC MOSFET K1 trench gate K1 different device structure K1 degradation K1 avalanche JF Materials Physics LK http://dx.doi.org/https://doi.org/10.3390/ma15020457 DO https://doi.org/10.3390/ma15020457 SF ELIB - SuUB Bremen
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