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The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i..:
Wen-Chieh Ho
;
Yao-Hsing Liu
;
Wen-Hsuan Wu
...
Inorganic Crystalline Materials. , 2020
Link:
https://doi.org/10.3390/cryst10080712
RT Journal T1
The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure
UL https://suche.suub.uni-bremen.de/peid=base-ftmdpi:oai:mdpi.com:_2073-4352_10_8_712_&Exemplar=1&LAN=DE A1 Wen-Chieh Ho A1 Yao-Hsing Liu A1 Wen-Hsuan Wu A1 Sung-Wen Huang Chen A1 Jerry Tzou A1 Hao-Chung Kuo A1 Chia-Wei Sun PB Multidisciplinary Digital Publishing Institute YR 2020 K1 Gallium Nitride (GaN) K1 vertical p - i - n diodes K1 FS-GaN substrate K1 vertical diode JF Inorganic Crystalline Materials LK http://dx.doi.org/https://doi.org/10.3390/cryst10080712 DO https://doi.org/10.3390/cryst10080712 SF ELIB - SuUB Bremen
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