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Behaviors of AlGaN Strain Relaxation on a GaN Porous Struct..:
Hao-Yu Hsieh
;
Ping-Wei Liou
;
Shaobo Yang
...
Nanoelectronics, Nanosensors and Devices. , 2023
Link:
https://doi.org/10.3390/nano13101617
RT Journal T1
Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis
UL https://suche.suub.uni-bremen.de/peid=base-ftmdpi:oai:mdpi.com:_2079-4991_13_10_1617_&Exemplar=1&LAN=DE A1 Hao-Yu Hsieh A1 Ping-Wei Liou A1 Shaobo Yang A1 Wei-Cheng Chen A1 Li-Ping Liang A1 Yueh-Chi Lee A1 Chih-Chung (C. C.) Yang PB Multidisciplinary Digital Publishing Institute YR 2023 K1 GaN porous structure K1 strain relaxation K1 d-spacing crystal lattice analysis K1 strain-damping K1 critical thickness JF Nanoelectronics, Nanosensors and Devices LK http://dx.doi.org/https://doi.org/10.3390/nano13101617 DO https://doi.org/10.3390/nano13101617 SF ELIB - SuUB Bremen
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