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1 Ergebnisse
1
Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs..:
In-Geun Lee
;
Hyeon-Bhin Jo
;
Ji-Min Baek
...
Semiconductor Devices. , 2022
Link:
https://doi.org/10.3390/electronics11172744
RT Journal T1
Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts
UL https://suche.suub.uni-bremen.de/peid=base-ftmdpi:oai:mdpi.com:_2079-9292_11_17_2744_&Exemplar=1&LAN=DE A1 In-Geun Lee A1 Hyeon-Bhin Jo A1 Ji-Min Baek A1 Sang-Tae Lee A1 Su-Min Choi A1 Hyo-Jin Kim A1 Wan-Soo Park A1 Ji-Hoon Yoo A1 Dae-Hong Ko A1 Tae-Woo Kim A1 Sang-Kuk Kim A1 Jae-Gyu Kim A1 Jacob Yun A1 Ted Kim A1 Jung-Hee Lee A1 Chan-Soo Shin A1 Jae-Hak Lee A1 Kwang-Seok Seo A1 Dae-Hyun Kim PB Multidisciplinary Digital Publishing Institute YR 2022 K1 InGaAs K1 Gate-All-Around (GAA) K1 nanosheet (NS) K1 selective regrowth JF Semiconductor Devices LK http://dx.doi.org/https://doi.org/10.3390/electronics11172744 DO https://doi.org/10.3390/electronics11172744 SF ELIB - SuUB Bremen
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