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1 Ergebnisse
1
Resistive Switching Characteristic of Cu Electrode-Based RR..:
Huanmei Yuan
;
Tianqing Wan
;
Hao Bai
Semiconductor Devices. , 2023
Link:
https://doi.org/10.3390/electronics12061471
RT Journal T1
Resistive Switching Characteristic of Cu Electrode-Based RRAM Device
UL https://suche.suub.uni-bremen.de/peid=base-ftmdpi:oai:mdpi.com:_2079-9292_12_6_1471_&Exemplar=1&LAN=DE A1 Huanmei Yuan A1 Tianqing Wan A1 Hao Bai PB Multidisciplinary Digital Publishing Institute YR 2023 K1 bipolar RS characteristic K1 Al 2 O 3 switching layer K1 Cu electrode K1 CBRAM K1 CRS JF Semiconductor Devices LK http://dx.doi.org/https://doi.org/10.3390/electronics12061471 DO https://doi.org/10.3390/electronics12061471 SF ELIB - SuUB Bremen
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