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1 Ergebnisse
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Use of p- and n-type vapor phase doping and sub-melt laser ..:
Nguyen, Ngoc Duy
;
Rosseel, Erik
;
Takeuchi, Shotaro
...
https://orbi.uliege.be/handle/2268/68760. , 2009
Link:
https://orbi.uliege.be/handle/2268/68760
RT Journal T1
Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology
UL https://suche.suub.uni-bremen.de/peid=base-ftorbi:oai:orbi.ulg.ac.be:2268_68760&Exemplar=1&LAN=DE A1 Nguyen, Ngoc Duy A1 Rosseel, Erik A1 Takeuchi, Shotaro A1 Everaert, Jean-Luc A1 Yang, Lijun A1 Goossens, Jozefien A1 Moussa, Alain A1 Clarysse, Trudo A1 Richard, Olivier A1 Bender, Hugo A1 Zaima, Shigeaki A1 Sakai, Akira A1 Loo, Roger A1 Lin, J. C A1 Vandervorst, Wilfried A1 Caymax, Matty PB Elsevier Science YR 2009 K1 Vapor phase doping K1 Atomic layer epitaxy K1 Electrical activation K1 Conformal doping K1 Heavy doping K1 Ultra shallow junction K1 Laser anneal K1 Engineering K1 computing & technology K1 Electrical & electronics engineering K1 Ingénierie K1 informatique & technologie K1 Ingénierie électrique & électronique JF https://orbi.uliege.be/handle/2268/68760 LK http://dx.doi.org/https://orbi.uliege.be/handle/2268/68760 DO https://orbi.uliege.be/handle/2268/68760 SF ELIB - SuUB Bremen
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