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1 Ergebnisse
1
Heterogeneous Integration and Fabrication of III-V MOS Devi..:
Waldron, Niamh
;
Nguyen, Ngoc Duy
;
Lin, Dennis
...
https://orbi.uliege.be/handle/2268/77722. , 2011
Link:
https://orbi.uliege.be/handle/2268/77722
RT Journal T1
Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment
UL https://suche.suub.uni-bremen.de/peid=base-ftorbi:oai:orbi.ulg.ac.be:2268_77722&Exemplar=1&LAN=DE A1 Waldron, Niamh A1 Nguyen, Ngoc Duy A1 Lin, Dennis A1 Brammertz, Guy A1 Vincent, Benjamin A1 Firrincieli, Andrea A1 Winderickx, Gillis A1 Sioncke, Sonja A1 De Jaeger, Brice A1 Wang, Gang A1 Mitard, Jérôme A1 Wang, Wei-E A1 Heyns, Marc A1 Caymax, Matty A1 Meuris, Marc A1 Absil, Philippe A1 Hoffman, Thomas PB ECS YR 2011 K1 III-V K1 CMOS K1 Device fabrication K1 Engineering K1 computing & technology K1 Electrical & electronics engineering K1 Ingénierie K1 informatique & technologie K1 Ingénierie électrique & électronique JF https://orbi.uliege.be/handle/2268/77722 LK http://dx.doi.org/https://orbi.uliege.be/handle/2268/77722 DO https://orbi.uliege.be/handle/2268/77722 SF ELIB - SuUB Bremen
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