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1 Ergebnisse
1
Interfacial and electrical properties of Ge MOS capacitor b..:
Huang, Y
;
Xu, JP
;
Liu, L
...
International Conference on Advanced Materials Research and Manufacturing Technologies [AMRMT]. , 2018
Link:
http://hdl.handle.net/10397/74805
RT Journal T1 <Title>Interfacial and electrical properties of Ge MOS capacitor by ZrLaON passivation layer and fluorine incorporation</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftpolyuhongkong:oai:ira.lib.polyu.edu.hk:10397_74805&Exemplar=1&LAN=DE A1 Huang, Y A1 Xu, JP A1 Liu, L A1 Cheng, ZX A1 Lai, PT A1 Tang, WM PB Institute of Physics Publishing YR 2018 JF International Conference on Advanced Materials Research and Manufacturing Technologies [AMRMT] LK http://hdl.handle.net/10397/74805 DO http://hdl.handle.net/10397/74805 SF ELIB - SuUB Bremen
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