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FTIR and electrical characterization of a-Si:H layers depos..:
ABDU ORDUÑA DIAZ
;
CARLOS GERARDO TREVIÑO PALACIOS
;
ALFONSO TORRES JACOME
citation:Orduña Diaz, A., et al., (2010). FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios, Materials Science and Engineering B. Vol. 174(1):93–96. , 2010
Link:
http://inaoe.repositorioinstitucional.mx/jspui/handle/..
RT Journal T1
FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios
UL https://suche.suub.uni-bremen.de/peid=base-ftrepnacmexico:oai:inaoe.repositorioinstitucional.mx:1009_1434&Exemplar=1&LAN=DE A1 ABDU ORDUÑA DIAZ A1 CARLOS GERARDO TREVIÑO PALACIOS A1 ALFONSO TORRES JACOME PB Materials Science and Engineering B YR 2010 K1 info:eu-repo/classification/Inspec/Hydrogenated amorphous silicon K1 info:eu-repo/classification/Inspec/Vibrational modes K1 info:eu-repo/classification/Inspec/PECVD K1 info:eu-repo/classification/cti/1 K1 info:eu-repo/classification/cti/22 K1 info:eu-repo/classification/cti/2209 JF citation:Orduña Diaz, A., et al., (2010). FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios, Materials Science and Engineering B. Vol. 174(1):93–96 LK http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1434 DO http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1434 SF ELIB - SuUB Bremen
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