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Using S-parameter measurements to determine the threshold v..:
GERMAN ANDRES ALVAREZ BOTERO
;
REYDEZEL TORRES TORRES
;
ROBERTO STACK MURPHY ARTEAGA
citation:Álvarez-Botero, G., et al., (2010). Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs, Microelectronics Reliability, (51): 342–349. , 2010
Link:
http://inaoe.repositorioinstitucional.mx/jspui/handle/..
RT Journal T1 <Title>Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftrepnacmexico:oai:inaoe.repositorioinstitucional.mx:1009_1493&Exemplar=1&LAN=DE A1 GERMAN ANDRES ALVAREZ BOTERO A1 REYDEZEL TORRES TORRES A1 ROBERTO STACK MURPHY ARTEAGA PB Elsevier Ltd YR 2010 K1 info:eu-repo/classification/cti/1 K1 info:eu-repo/classification/cti/22 K1 info:eu-repo/classification/cti/2203 JF citation:Álvarez-Botero, G., et al., (2010). Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs, Microelectronics Reliability, (51): 342–349 LK http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1493 DO http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1493 SF ELIB - SuUB Bremen
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