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FTIR and electrical characterization of a-Si:H layers depos..:

Abdu Orduña Díaz ; CARLOS GERARDO TREVIÑO PALACIOS ; MARLON ROJAS LOPEZ...
citation:Orduña-Diaz, A., et al., (2010). FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios, Materials Science and Engineering B ,(174): 93–96. , 2010

Link: http://inaoe.repositorioinstitucional.mx/jspui/handle/..

RT Journal
T1 <Title>FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftrepnacmexico:oai:inaoe.repositorioinstitucional.mx:1009_1773&Exemplar=1&LAN=DE
				
A1 Abdu Orduña Díaz
A1 CARLOS GERARDO TREVIÑO PALACIOS
A1 MARLON ROJAS LOPEZ
A1 RAUL JACOBO DELGADO MACUIL
A1 VALENTIN LOPEZ GAYOU
A1 ALFONSO TORRES JACOME
PB Elsevier B.V.
YR 2010
K1 info:eu-repo/classification/Hydrogenated amorphous silicon/Hydrogenated amorphous silicon
K1 info:eu-repo/classification/Vibrational modes/Vibrational modes
K1 info:eu-repo/classification/PECVD/PECVD
K1 info:eu-repo/classification/cti/1
K1 info:eu-repo/classification/cti/22
K1 info:eu-repo/classification/cti/2203
JF citation:Orduña-Diaz, A., et al., (2010). FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios, Materials Science and Engineering B ,(174): 93–96
LK http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1773
DO http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1773
SF ELIB - SuUB Bremen

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