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1 Ergebnisse
1
DIODE PROPERTY OF n-ZnO/p-Si HETEROJUNCTION STRUCTURE IN TH..:
Toprak, Ahmet
;
Gündoğdu, Yasemin
;
Kılıç, Hamdi Şükür
..
Selcuk University Journal of Engineering Sciences. , 2018
Link:
https://hdl.handle.net/20.500.12395/45810
RT Journal T1
DIODE PROPERTY OF n-ZnO/p-Si HETEROJUNCTION STRUCTURE IN THE DARK AND ILLUMINATION CONDITION ; KARANLIK ve AYDINLIK ŞARTLARDA n-ZnO/p-Si HETEROEKLEM YAPISININ DİYOT ÖZELLİĞİ
UL https://suche.suub.uni-bremen.de/peid=base-ftselcukuniv:oai:acikerisim.selcuk.edu.tr:20.500.12395_45810&Exemplar=1&LAN=DE A1 Toprak, Ahmet A1 Gündoğdu, Yasemin A1 Kılıç, Hamdi Şükür A1 Kepçeoğlu, Abdullah A1 Gezgin, Serap Yiğit PB Selçuk Üniversitesi YR 2018 K1 Heterojunction K1 open circuit voltage K1 short circuit current K1 barrier height K1 ideality factor K1 Heteroeklem K1 açık devre voltajı K1 kısa devre akımı K1 bariyer yüksekliği K1 idealite faktörü JF Selcuk University Journal of Engineering Sciences LK http://dx.doi.org/https://hdl.handle.net/20.500.12395/45810 DO https://hdl.handle.net/20.500.12395/45810 SF ELIB - SuUB Bremen
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