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Novel program method of string select transistors for layer..:
박병국
;
Kwon, Dae Woong
;
Kim, Wandong
...
IEEE Transactions on Electron Devices, Vol.63 No.9, pp.3521-3526. , 2018
Link:
https://hdl.handle.net/10371/139010
RT Journal T1 <Title>Novel program method of string select transistors for layer selection in channel-stacked NAND flash memory</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftseoulnuniv:oai:s-space.snu.ac.kr:10371_139010&Exemplar=1&LAN=DE A1 박병국 A1 Kwon, Dae Woong A1 Kim, Wandong A1 Kim, Do-Bin A1 Lee, Sang-Ho A1 Seo, Joo Yun A1 Choi, Eunseok A1 Cho, Gyu Seog A1 Park, Sung-Kye A1 Lee, Jong-Ho A1 Park, Byung-Gook PB Institute of Electrical and Electronics Engineers YR 2018 K1 3-D NAND flash memory K1 channel-stacked NAND flash memory K1 layer selection by multilevel operation (LSM) K1 stacked layer selection K1 string select transistor (SST) threshold voltage setting JF IEEE Transactions on Electron Devices, Vol.63 No.9, pp.3521-3526 LK http://dx.doi.org/https://hdl.handle.net/10371/139010 DO https://hdl.handle.net/10371/139010 SF ELIB - SuUB Bremen
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