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1 Ergebnisse
1
Fluorinated Graphene Contacts and Passivation Layer for MoS..:
Ryu, Huije
;
Kim, Dong-Hyun
;
Kwon, Junyoung
...
Advanced Electronic Materials, Vol.8 No.10, p. 2101370. , 2022
Link:
https://hdl.handle.net/10371/184018
RT Journal T1
Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors
UL https://suche.suub.uni-bremen.de/peid=base-ftseoulnuniv:oai:s-space.snu.ac.kr:10371_184018&Exemplar=1&LAN=DE A1 Ryu, Huije A1 Kim, Dong-Hyun A1 Kwon, Junyoung A1 Park, Sang Kyu A1 Lee, Wanggon A1 Seo, Hyungtak A1 Watanabe, Kenji A1 Taniguchi, Takashi A1 Kim, SunPhil A1 van der Zande, Arend M A1 Son, Jangyup A1 Lee, Gwan-Hyoung PB Wiley-VCH Verlag YR 2022 K1 2D materials heterostructure K1 electrical passivation K1 fluorination K1 graphene K1 MoS 2 JF Advanced Electronic Materials, Vol.8 No.10, p. 2101370 LK http://dx.doi.org/https://hdl.handle.net/10371/184018 DO https://hdl.handle.net/10371/184018 SF ELIB - SuUB Bremen
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