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A Finite Element Model for Bipolar Resistive Random Access ..:
Kim, Kwanyong
;
Lee, Kwangseok
;
Lee, Keun-Ho
..
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.14 No.3, pp.268-273. , 2022
Link:
https://hdl.handle.net/10371/186803
RT Journal T1 <Title>A Finite Element Model for Bipolar Resistive Random Access Memory</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftseoulnuniv:oai:s-space.snu.ac.kr:10371_186803&Exemplar=1&LAN=DE A1 Kim, Kwanyong A1 Lee, Kwangseok A1 Lee, Keun-Ho A1 Park, Young-Kwan A1 Choi, Woo Young PB 대한전자공학회 YR 2022 JF JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.14 No.3, pp.268-273 LK http://dx.doi.org/https://hdl.handle.net/10371/186803 DO https://hdl.handle.net/10371/186803 SF ELIB - SuUB Bremen
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