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Dramatic Reduction of Contact Resistance via Ultrathin LiF ..:

Hyunmin Cho (2395204) ; Donghee Kang (4531342) ; Yangjin Lee (3814993)...
https://figshare.com/articles/media/Dramatic_Reduction_of_Contact_Resistance_via_Ultrathin_LiF_in_Two-Dimensional_MoS_sub_2_sub_Field_Effect_Transistors/14423697. , 2021

Link: https://doi.org/10.1021/acs.nanolett.1c00180.s001

RT Journal
T1 <Title>Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS 2 Field Effect Transistors</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftsmithonian:oai:figshare.com:article_14423697&Exemplar=1&LAN=DE
				
A1 Hyunmin Cho (2395204)
A1 Donghee Kang (4531342)
A1 Yangjin Lee (3814993)
A1 Heesun Bae (5365928)
A1 Sungjae Hong (9592845)
A1 Yongjae Cho (512369)
A1 Kwanpyo Kim (1359129)
A1 Yeonjin Yi (1391434)
A1 Ji Hoon Park (179579)
A1 Seongil Im (1394893)
YR 2021
K1 Biophysics
K1 Medicine
K1 Cell Biology
K1 Molecular Biology
K1 Physiology
K1 Biotechnology
K1 Ecology
K1 Sociology
K1 Science Policy
K1 nanoscale electron devices
K1 use thermal-evaporated ultrathin LiF
K1 R C values
K1 4- bar FET
K1 2- bar FET
K1 2 D-like MoS 2 field effect transistors
K1 4- bar FET method
K1 Two-Dimensional MoS 2 Field Effect
K1 R C
K1 record-low R C
K1 transition metal dichalcogenide sem
K1 MoS 2 FETs
K1 contact
JF https://figshare.com/articles/media/Dramatic_Reduction_of_Contact_Resistance_via_Ultrathin_LiF_in_Two-Dimensional_MoS_sub_2_sub_Field_Effect_Transistors/14423697
LK http://dx.doi.org/https://doi.org/10.1021/acs.nanolett.1c00180.s001
DO https://doi.org/10.1021/acs.nanolett.1c00180.s001
SF ELIB - SuUB Bremen

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