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High-Performance Indium Gallium Tin Oxide Transistors with ..:

Cheol Hee Choi (10958335) ; Taikyu Kim (7500635) ; Shigenori Ueda (1425196)...
https://figshare.com/articles/journal_contribution/High-Performance_Indium_Gallium_Tin_Oxide_Transistors_with_an_Al_sub_2_sub_O_sub_3_sub_Gate_Insulator_Deposited_by_Atomic_Layer_Deposition_at_a_Low_Temperature_of_150_C_Roles_of_Hydrogen_and_Excess_Oxygen_in_the_Al_sub_2_sub_O_sub_3_sub_Die/14769010. , 1753

Link: https://doi.org/10.1021/acsami.1c04210.s001

RT Journal
T1 <Title>High-Performance Indium Gallium Tin Oxide Transistors with an Al 2 O 3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al 2 O 3 Dielectric Film</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftsmithonian:oai:figshare.com:article_14769010&Exemplar=1&LAN=DE
				
A1 Cheol Hee Choi (10958335)
A1 Taikyu Kim (7500635)
A1 Shigenori Ueda (1425196)
A1 Yu-Shien Shiah (10726172)
A1 Hideo Hosono (1261941)
A1 Junghwan Kim (434613)
A1 Jae Kyeong Jeong (1427947)
YR 1753
K1 Medicine
K1 Biotechnology
K1 Developmental Biology
K1 Environmental Sciences not elsewhere classified
K1 Biological Sciences not elsewhere classified
K1 Physical Sciences not elsewhere classified
K1 IGTO transistors
K1 ion mass spectroscopy
K1 Al 2 O 3 film
K1 Atomic Layer Deposition
K1 P O 2
K1 Al 2 O 3 Dielectric Film
K1 FE
K1 P O 2 condition
K1 V TH shifts
K1 Al 2 O 3
K1 X-ray photoemission spectroscopy
K1 PBS
K1 NBS
K1 layer-deposited Al 2 O 3 dielectric
K1 O i
K1 Al 2 O 3 Gate Insulator Deposited
K1 0.75 Ga 0.23 Sn 0.02 O
K1 subthreshold gate swing
K1 High-Performance Indium Gallium Tin
K1 gate bias stress
K1 SS
K1 ALD
K1 X-ray photoelectron spectroscopy
K1 processing temperature
K1 O 2 molecules
JF https://figshare.com/articles/journal_contribution/High-Performance_Indium_Gallium_Tin_Oxide_Transistors_with_an_Al_sub_2_sub_O_sub_3_sub_Gate_Insulator_Deposited_by_Atomic_Layer_Deposition_at_a_Low_Temperature_of_150_C_Roles_of_Hydrogen_and_Excess_Oxygen_in_the_Al_sub_2_sub_O_sub_3_sub_Die/14769010
LK http://dx.doi.org/https://doi.org/10.1021/acsami.1c04210.s001
DO https://doi.org/10.1021/acsami.1c04210.s001
SF ELIB - SuUB Bremen

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