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Resistive Switching in a MoSe 2 ‑Based Memory Device Invest..:

Biswajit Das (285833) ; Arnab Bera (10737945) ; Madhupriya Samanta (4179265)...
https://figshare.com/articles/journal_contribution/Resistive_Switching_in_a_MoSe_sub_2_sub_Based_Memory_Device_Investigated_Using_Conductance_Noise_Spectroscopy/14802816. , 2021

Link: https://doi.org/10.1021/acsaelm.1c00329.s001

RT Journal
T1 <Title>Resistive Switching in a MoSe 2 ‑Based Memory Device Investigated Using Conductance Noise Spectroscopy</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftsmithonian:oai:figshare.com:article_14802816&Exemplar=1&LAN=DE
				
A1 Biswajit Das (285833)
A1 Arnab Bera (10737945)
A1 Madhupriya Samanta (4179265)
A1 Satyabrata Bera (10988253)
A1 Sk Kalimuddin (10988256)
A1 Mohan Kundu (10988259)
A1 Sirshendu Gayen (10988262)
A1 Kalyan Kumar Chattopadhyay (1562860)
A1 Mintu Mondal (10988265)
YR 2021
K1 Medicine
K1 Biotechnology
K1 Ecology
K1 Sociology
K1 Cancer
K1 Hematology
K1 Infectious Diseases
K1 Plant Biology
K1 Biological Sciences not elsewhere classified
K1 Chemical Sciences not elsewhere classified
K1 charge conduction mechanisms
K1 noise power spectra
K1 Memory Device Investigated
K1 MoSe 2 nanoflakes
K1 HRS
K1 PMMA
K1 RRAM
K1 nonvolatile bipolar memory device
K1 Conductance Noise Spectroscopy Resi
K1 MoSe 2
K1 LRS
K1 characteristic
K1 conductance noise spectroscopy
JF https://figshare.com/articles/journal_contribution/Resistive_Switching_in_a_MoSe_sub_2_sub_Based_Memory_Device_Investigated_Using_Conductance_Noise_Spectroscopy/14802816
LK http://dx.doi.org/https://doi.org/10.1021/acsaelm.1c00329.s001
DO https://doi.org/10.1021/acsaelm.1c00329.s001
SF ELIB - SuUB Bremen

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