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1 Ergebnisse
1
Resistive Switching in a MoSe 2 ‑Based Memory Device Invest..:
Biswajit Das (285833)
;
Arnab Bera (10737945)
;
Madhupriya Samanta (4179265)
...
https://figshare.com/articles/journal_contribution/Resistive_Switching_in_a_MoSe_sub_2_sub_Based_Memory_Device_Investigated_Using_Conductance_Noise_Spectroscopy/14802816. , 2021
Link:
https://doi.org/10.1021/acsaelm.1c00329.s001
RT Journal T1
Resistive Switching in a MoSe 2 ‑Based Memory Device Investigated Using Conductance Noise Spectroscopy
UL https://suche.suub.uni-bremen.de/peid=base-ftsmithonian:oai:figshare.com:article_14802816&Exemplar=1&LAN=DE A1 Biswajit Das (285833) A1 Arnab Bera (10737945) A1 Madhupriya Samanta (4179265) A1 Satyabrata Bera (10988253) A1 Sk Kalimuddin (10988256) A1 Mohan Kundu (10988259) A1 Sirshendu Gayen (10988262) A1 Kalyan Kumar Chattopadhyay (1562860) A1 Mintu Mondal (10988265) YR 2021 K1 Medicine K1 Biotechnology K1 Ecology K1 Sociology K1 Cancer K1 Hematology K1 Infectious Diseases K1 Plant Biology K1 Biological Sciences not elsewhere classified K1 Chemical Sciences not elsewhere classified K1 charge conduction mechanisms K1 noise power spectra K1 Memory Device Investigated K1 MoSe 2 nanoflakes K1 HRS K1 PMMA K1 RRAM K1 nonvolatile bipolar memory device K1 Conductance Noise Spectroscopy Resi K1 MoSe 2 K1 LRS K1 characteristic K1 conductance noise spectroscopy JF https://figshare.com/articles/journal_contribution/Resistive_Switching_in_a_MoSe_sub_2_sub_Based_Memory_Device_Investigated_Using_Conductance_Noise_Spectroscopy/14802816 LK http://dx.doi.org/https://doi.org/10.1021/acsaelm.1c00329.s001 DO https://doi.org/10.1021/acsaelm.1c00329.s001 SF ELIB - SuUB Bremen
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