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Unveiling the Origin of Robust Ferroelectricity in Sub‑2 nm..:

Hyangsook Lee (195415) ; Duk-Hyun Choe (2036233) ; Sanghyun Jo (3032880)...
https://figshare.com/articles/journal_contribution/Unveiling_the_Origin_of_Robust_Ferroelectricity_in_Sub_2_nm_Hafnium_Zirconium_Oxide_Films/15057163. , 2021

Link: https://doi.org/10.1021/acsami.1c08718.s001

RT Journal
T1 <Title>Unveiling the Origin of Robust Ferroelectricity in Sub‑2 nm Hafnium Zirconium Oxide Films</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftsmithonian:oai:figshare.com:article_15057163&Exemplar=1&LAN=DE
				
A1 Hyangsook Lee (195415)
A1 Duk-Hyun Choe (2036233)
A1 Sanghyun Jo (3032880)
A1 Jung-Hwa Kim (11185939)
A1 Hyun Hwi Lee (2263546)
A1 Hyun-Joon Shin (1800592)
A1 Yeehyun Park (11185942)
A1 Seunghun Kang (5592632)
A1 Yeonchoo Cho (1276644)
A1 Seontae Park (11185945)
A1 Taehwan Moon (2811787)
A1 Deokjoon Eom (11185948)
A1 Mirine Leem (4663336)
A1 Yunseok Kim (1439542)
A1 Jinseong Heo (1872571)
A1 Eunha Lee (2031067)
A1 Hyoungsub Kim (1758532)
YR 2021
K1 Biophysics
K1 Ecology
K1 Sociology
K1 Cancer
K1 Inorganic Chemistry
K1 Space Science
K1 Biological Sciences not elsewhere classified
K1 Physical Sciences not elsewhere classified
K1 ultrathin HZO films
K1 Robust Ferroelectricity
K1 ferroelectric
K1 deposition process
K1 out-of-plane direction
K1 chemical characterization
K1 high-index facet
K1 nanoelectronic devices
K1 HfO 2
K1 first-principles calculations
K1 thickness regime
K1 orientation
K1 surface energy
K1 ferroelectricity
K1 hydroxyl adsorption
K1 memory devices
K1 nm
K1 analysis techniques
K1 ultrathin hafnium zirconium oxide
JF https://figshare.com/articles/journal_contribution/Unveiling_the_Origin_of_Robust_Ferroelectricity_in_Sub_2_nm_Hafnium_Zirconium_Oxide_Films/15057163
LK http://dx.doi.org/https://doi.org/10.1021/acsami.1c08718.s001
DO https://doi.org/10.1021/acsami.1c08718.s001
SF ELIB - SuUB Bremen

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