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Influence of Sapphire Substrate Orientation on the van der ..:

Phuong Vuong (9690738) ; Suresh Sundaram (3480035) ; Vishnu Ottapilakkal (10941586)...
https://figshare.com/articles/journal_contribution/Influence_of_Sapphire_Substrate_Orientation_on_the_van_der_Waals_Epitaxy_of_III-Nitrides_on_2D_Hexagonal_Boron_Nitride_Implication_for_Optoelectronic_Devices/17868577. , 2022

Link: https://doi.org/10.1021/acsanm.1c03481.s001

RT Journal
T1 <Title>Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftsmithonian:oai:figshare.com:article_17868577&Exemplar=1&LAN=DE
				
A1 Phuong Vuong (9690738)
A1 Suresh Sundaram (3480035)
A1 Vishnu Ottapilakkal (10941586)
A1 Gilles Patriarche (1385736)
A1 Ludovic Largeau (1605580)
A1 Ashutosh Srivastava (615547)
A1 Adama Mballo (9690741)
A1 Tarik Moudakir (9690750)
A1 Simon Gautier (9690753)
A1 Paul L. Voss (9690756)
A1 Jean-Paul Salvestrini (9690759)
A1 Abdallah Ougazzaden (9449339)
YR 2022
K1 Biophysics
K1 Biochemistry
K1 Inorganic Chemistry
K1 Science Policy
K1 Space Science
K1 Biological Sciences not elsewhere classified
K1 Physical Sciences not elsewhere classified
K1 van der waals
K1 thermal mismatch requirements
K1 thermal expansion coefficient
K1 leds )
K1 high
K1 allow convenient lift
K1 polar gan grown
K1 -
K1 c </
K1 study 2d h
K1 >- plane sapphire
K1 sapphire substrate orientation
K1 bn layers grown
K1 plane )
K1 bn grown
K1 substrate orientation
K1 crystallographic orientation
K1 use nonpolar
K1 thereby acting
K1 surface energy
K1 resolution x
K1 ray diffraction
K1 power electronics
K1 potential design
K1 particularly interesting
K1 optoelectronic devices
K1 emitting diodes
K1 directly affected
K1 device structures
K1 crystalline quality
K1 bn layers
K1 bn growth
K1 bn alignment
K1 bn /<
K1 algan grown
K1 >- axis
K1 2d h
JF https://figshare.com/articles/journal_contribution/Influence_of_Sapphire_Substrate_Orientation_on_the_van_der_Waals_Epitaxy_of_III-Nitrides_on_2D_Hexagonal_Boron_Nitride_Implication_for_Optoelectronic_Devices/17868577
LK http://dx.doi.org/https://doi.org/10.1021/acsanm.1c03481.s001
DO https://doi.org/10.1021/acsanm.1c03481.s001
SF ELIB - SuUB Bremen

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