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Nonconventional Strain Engineering for Uniform Biaxial Tens..:

Heechang Shin ; Ajit Kumar Katiyar ; Anh Tuan Hoang...
https://figshare.com/articles/journal_contribution/Nonconventional_Strain_Engineering_for_Uniform_Biaxial_Tensile_Strain_in_MoS_sub_2_sub_Thin_Film_Transistors/25077858. , 2024

Link: https://doi.org/10.1021/acsnano.3c10495.s001

RT Journal
T1 <Title>Nonconventional Strain Engineering for Uniform Biaxial Tensile Strain in MoS 2 Thin Film Transistors</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftsmithonianinsp:oai:figshare.com:article_25077858&Exemplar=1&LAN=DE
				
A1 Heechang Shin
A1 Ajit Kumar Katiyar
A1 Anh Tuan Hoang
A1 Seok Min Yun
A1 Beom Jin Kim
A1 Gwanjin Lee
A1 Youngjae Kim
A1 JaeDong Lee
A1 Hyunmin Kim
A1 Jong-Hyun Ahn
YR 2024
K1 Biophysics
K1 Microbiology
K1 Cell Biology
K1 Biotechnology
K1 Ecology
K1 Space Science
K1 Chemical Sciences not elsewhere classified
K1 Physical Sciences not elsewhere classified
K1 recent theoretical investigations
K1 conventional methods used
K1 compressive residual stress
K1 biaxial tensile strain
K1 strain engineering approach
K1 nonconventional strain engineering
K1 transferred onto sio
K1 si transistor technologies
K1 also markedly enhance
K1 2 </ sub
K1 ultrathin 2d tmds
K1 strain engineering
K1 tmds )
K1 underneath si
K1 selective removal
K1 process ensured
K1 precisely controlled
K1 oxide stressors
K1 large area
K1 electrical properties
K1 crucial technique
K1 channels maintained
K1 carrier mobility
JF https://figshare.com/articles/journal_contribution/Nonconventional_Strain_Engineering_for_Uniform_Biaxial_Tensile_Strain_in_MoS_sub_2_sub_Thin_Film_Transistors/25077858
LK http://dx.doi.org/https://doi.org/10.1021/acsnano.3c10495.s001
DO https://doi.org/10.1021/acsnano.3c10495.s001
SF ELIB - SuUB Bremen

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