De Guzman, Joyce Ann T ; Markevich, Vladimir P ; Hawkins, Ian D...
De Guzman , J A T , Markevich , V P , Hawkins , I D , Coutinho , J , Ayedh , H M , Binns , J , Abrosimov , N V , Lastovskii , S B , Crowe , I F , Halsall , M P & Peaker , A R 2021 , ' Acceptor-oxygen defects in silicon : The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer ' , Journal of Applied Physics , vol. 130 , no. 24 , 245703 . https://doi.org/10.1063/5.0076980.  , 2021